| DISSIPATION FACTOR AT REFERENCE TEMP IN PERCENT | 2.500 |
| BODY HEIGHT | 1.1 MILLIMETERS NOMINAL |
| BODY LENGTH | 3.2 MILLIMETERS NOMINAL |
| BODY STYLE | CHIP TYPE |
| BODY WIDTH | 1.6 MILLIMETERS NOMINAL |
| CAPACITANCE VALUE PER SECTION | 330.000 PICOFARADS SINGLE SECTION |
| CASE MATERIAL | CERAMIC |
| INSULATION RESISTANCE AT MAXIMUM OPERATING TEMP | 1000.0 MEGOHMS |
| INSULATION RESISTANCE AT REFERENCE TEMP | 10000.0 MEGOHMS |
| III TEMP COEFFICIENT OF CAPACITANCE PER SECTION IN PPM PER DEG CELSIUS | 0.0 SINGLE SECTION |
| PROPRIETARY CHARACTERISTICS | PACS |
| NONDERATED CONTINUOUS VOLTAGE RATING AND TYPE PER SECTION | 50.0 DC SINGLE SECTION |
| NONDERATED OPERATING TEMP | -55.0 DEG CELSIUS MINIMUM AND 125.0 DEG CELSIUS MAXIMUM |
| RELIABILITY INDICATOR | NOT ESTABLISHED |
| SCHEMATIC DIAGRAM DESIGNATOR | NO COMMON OR GROUNDED ELECTRODE(S) |
| TERMINAL LENGTH | 0.5 MILLIMETERS NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 BONDING PAD |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TOLERANCE OF TEMP COEFFICIENT PER SECTION IN PPM PER DEG CELSIUS | -30.0/+30.0 SINGLE SECTION |
| TOLERANCE RANGE PER SECTION | -5.00/+5.00 PERCENT SINGLE SECTION |