CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 5.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 100.00 MICROAMPERES MAXIMUM GATE CURRENT100.00 MICROAMPERES MAXIMUM GATE CURRENT |
FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72TO-72 |
INTERNAL CONFIGURATION | FIELD EFFECTFIELD EFFECT |
OVERALL DIAMETER | 0.230 INCHES MAXIMUM0.230 INCHES MAXIMUM |
OVERALL LENGTH | 0.210 INCHES MAXIMUM0.210 INCHES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION125.0 CELSIUS JUNCTION |
MOUNTING METHOD | TERMINALTERMINAL |
POWER RATING PER CHARACTERISTIC | 225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION225.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
SEMICONDUCTOR MATERIAL | SILICONSILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 6.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL0.100 INCHES NOMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM0.500 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD4 UNINSULATED WIRE LEAD |