|
|
|
National Stock Number:
5961-00-241-3594
Federal Supply Class:
5961
National Item Identification Number:
002413594
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
|
Manufacturer Information:
| 19-031-5 | 00816 | PALOMAR PRODUCTS, INC. | | 2N697 | 01281 | TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES | | 2N697 | 01295 | TEXAS INSTRUMENTS INCORPORATED | | 2N697 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N697 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N697 | 09214 | GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN | | 2N697 | 12040 | NATIONAL SEMICONDUCTOR CORP | | 352-0197-001 | 13499 | ROCKWELL COLLINS, INC. | | 2N697 | 3B150 | RAYTHEON COMPANY | | 2N697 | 49956 | RAYTHEON COMPANY | | 2N697A | 50891 | SEMICONDUCTOR TECHNOLOGY, INC. | | 2N697 | 94990 | MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP | | 2N697A | C7191 | ADELCO ELEKTRONIK GMBH | | 2N697A | D6528 | LACON ELECTRONIC GMBH | | 618-4921-161 | 13499 | ROCKWELL COLLINS, INC. | | 352-0197-001 | 15818 | TELCOM SEMICONDUCTOR INC | | JAN2N697 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JANTX2N3868 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M |
|
Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.203 INCHES NOMINAL | | OVERALL LENGTH | 0.188 INCHES NOMINAL | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 4.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
|
|