|
|
National Stock Number: 5961-00-250-2408
Federal Supply Class: 5961
National Item Identification Number: 002502408
Description: TRANSISTOR
Detail: An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
|
Manufacturer Information:
16769142-001 | 28009 | SYPRIS ELECTRONICS, LLC | 1853-4916 | 33783 | BR COMMUNICATIONS INC | 2N3916 | 04454 | SENSOR SYSTEMS, L.L.C. | 2N3916 | 04713 | FREESCALE SEMICONDUCTOR, INC. | 2N4916 | 12040 | NATIONAL SEMICONDUCTOR CORP | 26010160 | 30669 | E AND R ELECTRONICS INC DBA DUMONT OSCILLOSCOPE | 2N4916 | 13715 | FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD | 2N4916 | 15818 | TELCOM SEMICONDUCTOR INC | 2N4916 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION | 2N4916 | 31338 | SEMITRONICS CORP | 2N4916 | 54485 | MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE | 2N4916 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 2N4916 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | 2N4916 | C7191 | ADELCO ELEKTRONIK GMBH | 2N4956 | 21854 | SPACE POWER ELECTRONICS INC | 91-49-160 | 28009 | SYPRIS ELECTRONICS, LLC | CH74336 | 34423 | CLARKE HESS COMMUNICATION RESEARCH CORP | RELEASE5476 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 516147-059 | 88869 | EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT | 5961PL0590234 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH | 50211600 | 97384 | TEXTRON SYSTEMS CORPORATION | 2N4916A | C7191 | ADELCO ELEKTRONIK GMBH | 2N4916 | D6528 | LACON ELECTRONIC GMBH |
|
Techincal Specification:
CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | FEATURES PROVIDED | HERMETICALLY SEALED CASE | INTERNAL CONFIGURATION | JUNCTION CONTACT | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION | MOUNTING METHOD | TERMINAL | OVERALL DIAMETER | 0.330 INCHES NOMINAL | OVERALL LENGTH | 0.250 INCHES MAXIMUM | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | SEMICONDUCTOR MATERIAL | SILICON | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | TERMINAL LENGTH | 0.400 INCHES MINIMUM | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
|
|