COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 115.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
FUNCTION FOR WHICH DESIGNED | SWITCHING |
MATERIAL | GLASS AND PLASTIC ENCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION |
MOUNTING METHOD | TERMINAL |
OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
OVERALL LENGTH | 0.500 INCHES MAXIMUM |
OVERALL WIDTH | 0.450 INCHES MAXIMUM |
SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
PRECIOUS MATERIAL AND LOCATION | LEADS GOLD |
PRECIOUS MATERIAL | GOLD |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 0.900 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |