| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| OVERALL LENGTH | 0.725 INCHES NOMINAL ALL TRANSISTOR |
| MATERIAL | CERAMIC INCLOSURE ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION ALL TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 100.0 WATTS MINIMUM AVERAGE GATE POWER DISSIPATION ALL TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON ALL TRANSISTOR |
| TEST DATA DOCUMENT | 12338-44817-00 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER ALL TRANSISTOR |