| GENERAL CHARACTERISTICS ITEM DESCRIPTION | SILICON PLANAR EPITAXAL DIODE. 250PICOFARAD. 100 V MAX. REVERSE CURRENT AT 8 MICROAMPERS.MINIMUM Q OF 160 AT MINUS 8 V. Q MEASURED AT 25 MEGAHERTZ.WORKING VOLTAGE MINUS 100 AT 25 DEG. C. REVERSE VOLTAGEMINUS 115 V AT 25 DEG. C. MAX OPERATING TEMPERATURE 85DEG. C. TEMPERATURE COEFFICIENT AT MINUS 8 DEG. 0.03 PERCENTDEG C MAX. CAPACITY VALUES AT MINUS 8 V. 1 MEGAHERTZTRACKING ERROR OF 1 PERCENT DIM 0.350 IN. X 0.350 IN. X0.150 IN. BEVEL ON LOWER EDGE. TWO WIRE LEADS LOCATED 1 ONEACH END. WIRE LEADS 0.030 IN.DIA. 1.44 IN LONG |