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National Stock Number:
5961-00-325-8893
Federal Supply Class:
5961
National Item Identification Number:
003258893
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 7531460P0003 | 99971 | LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS | | 7531460P3 | 30043 | SOLID STATE DEVICES, INC | | SSC1851 | 01295 | TEXAS INSTRUMENTS INCORPORATED | | SD149H | 04713 | FREESCALE SEMICONDUCTOR, INC. | | HP13869 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 7531460P3 | 99971 | LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE | | FUNCTION FOR WHICH DESIGNED | AMPLIFIER | | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM | | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN | | POWER RATING PER CHARACTERISTIC | 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
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