COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
OVERALL LENGTH | 0.210 INCHES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS CASE |
MOUNTING METHOD | TERMINAL |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
SPECIAL FEATURES | COMMON ANODE |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
TEST DATA DOCUMENT | 81413-200985 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |