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National Stock Number:
5961-00-400-6242
Federal Supply Class:
5961
National Item Identification Number:
004006242
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 10050496 | 18876 | U S ARMY AVIATION AND MISSILE COMMAND | | 2N3020 | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | | 2N3020 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N3020 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N3020 | 12040 | NATIONAL SEMICONDUCTOR CORP | | 2N3020 | 14433 | ITT SEMICONDUCTORS DIV | | 2N3020 | 15818 | TELCOM SEMICONDUCTOR INC | | 2N3020 | 30043 | SOLID STATE DEVICES, INC | | 2N3020 | 34156 | OSI OPTOELECTRONICS, INC | | 2N3020 | 34428 | UNITED PAGE INC | | 2N3020 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N3020 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 2N3020 | C7191 | ADELCO ELEKTRONIK GMBH | | 2N3020 | D2540 | PHILIPS SEMICONDUCTORSUNTERNEHMENSBEREICH DER PHILIPS GMB | | 800742-001 | 30598 | COMPUNETICS INC | | STR1116 | 55718 | SYNTAR INDUSTRIES INC | | RELEASE4475C | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N3020A | C7191 | ADELCO ELEKTRONIK GMBH | | 2N3020 | D6528 | LACON ELECTRONIC GMBH |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.359 INCHES NOMINAL | | OVERALL LENGTH | 0.250 INCHES NOMINAL | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 14.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL CIRCLE DIAMETER | 0.020 INCHES NOMINAL | | TERMINAL LENGTH | 1.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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