5305-00-412-0649 SCREW,MACHINE Index 5905-00-412-0653 RESISTOR,VARIABLE,NONWIRE WOUND,

National Stock Number:
5961-00-412-0650

Federal Supply Class:
5961

National Item Identification Number:
004120650

Description:
TRANSISTOR

Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.


Manufacturer Information:
019-004836-09026916NORTHROP GRUMMAN SYSTEMS CORPORATION
260337D0327SELEX ES GMBH
2N510904713FREESCALE SEMICONDUCTOR, INC.
4192800-35505869RAYTHEON COMPANY
2N510957962STMICROELECTRONICS INC
3522 500 28141H0203THALES NEDERLAND B.V.
78C837-00104660AIL SYSTEMS INC SUB OF EATON CORP
6127518722HARRIS CORP SEMICONDUCTOR SECTOR
A16-00442129989SONICRAFT INC
848155-000165597THALES USA, INC.
JAN2N510981349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
5961PL13754559009HINSPEKTORAT WSPARCIA SIL ZBROJNYCH
800460-196214RAYTHEON COMPANY
6Q040AA-005K0978BAE SYSTEMS
Q05109F34764SCIENTIFIC RADIO SYSTEMS INC
MIL-PRF-19500/45381349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
MIL-S-19500/45381349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Q68000A566ZC0426HENSOLDT SENSORS GMBH
JAN2N5109AC7191ADELCO ELEKTRONIK GMBH
JAN2N5109AD6528LACON ELECTRONIC GMBH


Techincal Specification:
CURRENT RATING PER CHARACTERISTIC400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDEDHERMETICALLY SEALED CASE
INTERNAL CONFIGURATIONJUNCTION CONTACT
OVERALL DIAMETER0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 CELSIUS JUNCTION
MOUNTING METHODTERMINAL
POWER RATING PER CHARACTERISTIC1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIALSILICON
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
SPECIFICATION/STANDARD DATA81349-MIL-S-19500/453 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).


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