COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 3RD TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 4TH TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 1ST TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
OVERALL HEIGHT | 0.200 INCHES MAXIMUM |
OVERALL LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
OVERALL WIDTH | 0.325 INCHES MAXIMUM |
MATERIAL | PLASTIC INCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION |
MOUNTING METHOD | PRESS FIT |
POWER RATING PER CHARACTERISTIC | 4.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 4TH TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 3RD TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR |
TERMINAL TYPE AND QUANTITY | 14 RIBBON |