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National Stock Number:
5961-00-791-3707
Federal Supply Class:
5961
National Item Identification Number:
007913707
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 2N3728 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N3729 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N3729 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N3729 | 14936 | GENERAL SEMICONDUCTOR INC | | 2N3729 | 1EX34 | HITE BETSY DBA REAL VALUE APPRAISERS | | 2N3729 | 30043 | SOLID STATE DEVICES, INC | | 8437449 | 19204 | ARMY, UNITED STATES DEPARTMENT OF THE | | 2N3729 | 34428 | UNITED PAGE INC | | 450968-1 | 3B150 | RAYTHEON COMPANY | | 450968-1 | 49956 | RAYTHEON COMPANY | | 2N3729 | 5V1P1 | ON SEMICONDUCTOR CORPORATION | | 2N3729 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | RELEASE5046 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND | | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL SEMICONDUCTOR DEVICE DIODE | | POWER RATING PER CHARACTERISTIC | 450.00 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION | | INCLOSURE MATERIAL | METAL | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-77 | | MOUNTING METHOD | TERMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | | OVERALL LENGTH | 0.240 INCHES MINIMUM AND | | 0.260 INCHES MAXIMUM | | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND | | 0.370 INCHES MAXIMUM | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL | | CRITICALITY CODE JUSTIFICATION | FEAT |
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