| COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 NOMINAL WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE ALL SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 225.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC AND |
| 75.00 MILLIAMPERES NOMINAL AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND |
| 500.00 MILLIAMPERES NOMINAL PEAK FORWARD SURGE CURRENT AND |
| 2.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | PLASTIC ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.425 INCHES MINIMUM AND |
| 0.465 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL HEIGHT | 0.165 INCHES MINIMUM AND |
| 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| SPECIAL FEATURES | C/O 2 PAIR MATCHED W/IN 20 MILLIAMPS FWD CURRENT,EA PAIR IN PKG AS DESCRIBED. |