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National Stock Number: 5961-00-837-6443
Federal Supply Class: 5961
National Item Identification Number: 008376443
Description: TRANSISTOR
Detail: An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
2N3233 | 04713 | FREESCALE SEMICONDUCTOR, INC. | 2N3233 | 05277 | WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV | 2N3233 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | 2N3233 | 07595 | HUG ELECTRONICS CORP | 2N3233 | 11058 | CSR INDUSTRIES INC | 2N3233 | 12045 | ELECTRONIC TRANSISTORS CORP | 2N3233 | 21845 | SOLITRON DEVICES, INC. | 2N3233 | 21873 | SLATER ELECTRIC INC | 2N3233 | 30043 | SOLID STATE DEVICES, INC | 2N3233 | 30045 | SOLID POWER CORP | 2N3233 | 33178 | MICROSEMI PPC INC | 2N3233 | 52333 | API ELECTRONICS, INC. | 2N3233 | 64039 | HYBRID SEMICONDUCTORS & ELECTRONICS INC DBA HYBRID SEMI CONDUCTORS & ELECTRO | 2N3233 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 5469-035 | 05869 | RAYTHEON COMPANY | RELEASE4716 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 2N3233 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | 2N3233 | 83298 | ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE |
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Techincal Specification:
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC | FEATURES PROVIDED | HERMETICALLY SEALED CASE | INTERNAL CONFIGURATION | JUNCTION CONTACT | OVERALL HEIGHT | 0.420 INCHES MAXIMUM | OVERALL LENGTH | 1.547 INCHES NOMINAL | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS CASE | MOUNTING FACILITY QUANTITY | 2 | MOUNTING METHOD | UNTHREADED HOLE | POWER RATING PER CHARACTERISTIC | 117.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION | SEMICONDUCTOR MATERIAL | SILICON | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | SPECIFICATION/STANDARD DATA | 80131-RELEASE4716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 110.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
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