| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 10.00 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 3 PIN ALL TRANSISTOR |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |