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National Stock Number:
5961-00-943-9203
Federal Supply Class:
5961
National Item Identification Number:
009439203
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 1855-0029 | 28480 | HEWLETT-PACKARD COMPANY | | 2068169-0701 | 27914 | HONEYWELL INTERNATIONAL INC DBA HONEYWELL | | 2N2608 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N2608 | 07688 | JOINT ELECTRON DEVICE ENGINEERING COUNCIL | | 28461-41305 | K0662 | LEONARDO MW LTD | | 28461-41305 | U6682 | LEONARDO UK LTD | | 2N2608A | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 4192800-215 | 05869 | RAYTHEON COMPANY | | 352-0605-010 | 13499 | ROCKWELL COLLINS, INC. | | 352-7500-360 | 13499 | ROCKWELL COLLINS, INC. | | 352-7500-881 | 13499 | ROCKWELL COLLINS, INC. | | 2N2608 | 17856 | SILICONIX INCORPORATED | | 966102-3 | 94580 | HONEYWELL INTERNATIONAL INC. | | 2N2608 | D9816 | WIMA SPEZIALVERTRIEB ELEKTRONISCHERBAUELEMENTE GMBH & CO.KG | | MQ2N2608 | 43611 | MICROSEMI CORP - MASSACHUSETTS | | TX2N2608 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JAN2N2608 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | MIL-S-19500/295 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JAN2N2608 | 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JAN2N2608A | C7191 | ADELCO ELEKTRONIK GMBH |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE | | CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | FIELD EFFECT | | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM | | OVERALL HEIGHT | 0.210 INCHES MAXIMUM | | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS AMBIENT AIR | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE |
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