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National Stock Number:
5961-00-954-0802
Federal Supply Class:
5961
National Item Identification Number:
009540802
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 1602547 | 56232 | LOCKHEED MARTIN CORPORATION | | 207068P2 | 94117 | BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. | | 2N3497 | 01295 | TEXAS INSTRUMENTS INCORPORATED | | 2N3497 | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | | 2N3497 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N3497 | 05077 | STERLING ELECTRONICS CORP | | 2N3497 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N3497 | 07688 | JOINT ELECTRON DEVICE ENGINEERING COUNCIL | | 2N3497 | 09214 | GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN | | 2N3497 | 30043 | SOLID STATE DEVICES, INC | | 2N3497 | 34156 | OSI OPTOELECTRONICS, INC | | 2N3497 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N3497 | F4597 | FREESCALE SEMICONDUCTEURS FRANCE SAS | | 2N3497 | K0268 | RAYTHEON SYSTEMS LIMITED | | CT0033-001 | 22915 | NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV | | RELEASE4831 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 8211 120 00292 | F6170 | THALES OPTRONIQUE SAS | | 2N3497 | K0461 | RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP | | 5SA6030 | U4338 | THALES UK LIMITED DBA THALES UK LTDDEFENCE MISSION SYSTEMS |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.220 INCHES NOMINAL | | OVERALL LENGTH | 0.188 INCHES NOMINAL | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | | SPECIFICATION/STANDARD DATA | 80131-RELEASE4831 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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