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National Stock Number:
5961-00-954-9337
Federal Supply Class:
5961
National Item Identification Number:
009549337
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 1854-0084 | 28480 | HEWLETT-PACKARD COMPANY | | 2N3232 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N3232 | 05277 | WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV | | 2N3232 | 07256 | SILICON TRANSISTOR CORP SUB OF BBF INC | | 2N3232 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N3232 | 07595 | HUG ELECTRONICS CORP | | 2N3232 | 11058 | CSR INDUSTRIES INC | | 2N3232 | 12045 | ELECTRONIC TRANSISTORS CORP | | 2N3232 | 13409 | RSM ELECTRON POWER INC | | 2N3232 | 21845 | SOLITRON DEVICES, INC. | | 2N3232 | 21873 | SLATER ELECTRIC INC | | 2N3232 | 30043 | SOLID STATE DEVICES, INC | | 2N3232 | 30045 | SOLID POWER CORP | | 2N3232 | 33178 | MICROSEMI PPC INC | | A23247-001 | 13923 | L3 TECHNOLOGIES, INC. | | 2N3232 | 34156 | OSI OPTOELECTRONICS, INC | | 2N3232 | 52333 | API ELECTRONICS, INC. | | 2N3232 | 5V1P1 | ON SEMICONDUCTOR CORPORATION | | 2N3232 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | RELEASE4716 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N3232 | 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 2N3232 | F1721 | RADIOTECHNIQUE-COPRIM 'R.T.C.'LA SA DIV 'RADIOTECHNIQUE' |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.760 INCHES MINIMUM AND 0.770 INCHES MAXIMUM | | OVERALL LENGTH | 0.400 INCHES MINIMUM AND 0.420 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS CASE | | MOUNTING FACILITY QUANTITY | 2 | | MOUNTING METHOD | UNTHREADED HOLE | | POWER RATING PER CHARACTERISTIC | 117.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | SPECIFICATION/STANDARD DATA | 80131-RELEASE4716 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
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