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National Stock Number:
5961-00-958-9381
Federal Supply Class:
5961
National Item Identification Number:
009589381
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 1854-0012 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. | | 1854-0012 | 28480 | HEWLETT-PACKARD COMPANY | | 2N1983 | 03538 | LOCKHEED MARTIN CORPORATION | | 2N1983 | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | | 2N1983 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 1854-0012 | 7ZXR5 | KEYSIGHT TECHNOLOGIES INC | | 2N1983 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N1983 | 08225 | INDUSTRO TRANSISTOR CORP | | 2N1983 | 11058 | CSR INDUSTRIES INC | | 2N1983 | 12045 | ELECTRONIC TRANSISTORS CORP | | 2N1983 | 15818 | TELCOM SEMICONDUCTOR INC | | 2N1983 | 30043 | SOLID STATE DEVICES, INC | | 2N1983 | 3B150 | RAYTHEON COMPANY | | 2N1983 | 49956 | RAYTHEON COMPANY | | 2N1986 | 0PN68 | AMPEX DATA SYSTEMS CORPORATION | | 2N1986 | 15818 | TELCOM SEMICONDUCTOR INC | | 2N1986 | 49956 | RAYTHEON COMPANY | | 2N1986 | 50891 | SEMICONDUCTOR TECHNOLOGY, INC. | | 2N1983 | 54X10 | RAYTHEON COMPANY | | 2N1986 | 64039 | HYBRID SEMICONDUCTORS & ELECTRONICS INC DBA HYBRID SEMI CONDUCTORS & ELECTRO | | 2N1986 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | RELEASE3268 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | RELEASE3455 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | 2N1983 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM | | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | SPECIFICATION/STANDARD DATA | 80131-RELEASE3268 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL LENGTH | 1.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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