SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH SPECIFIED RESISTANCE BETWEEN BASE AND EMITTER |
POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 1 UNINSULATED WIRE LEAD AND |
| 1 THREADED STUD |
OVERALL LENGTH | 0.320 INCHES NOMINAL |
MOUNTING METHOD | THREADED STUD |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.190 INCHES |
OVERALL WIDTH ACROSS FLATS | 0.437 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |