SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
POWER RATING PER CHARACTERISTIC | 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.330 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL AND |
| UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL LENGTH | 1.430 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
OVERALL DIAMETER | 0.375 INCHES MAXIMUM |
FEATURES PROVIDED | MOUNTING HARDWARE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |