SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
TERMINAL LENGTH | 1.500 INCHES MINIMUM AND |
| 1.750 INCHES MAXIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/274 GOVERNMENT SPECIFICATION |
SPEC/STD CONTROLLING DATA | |
MANUFACTURERS CODE | 81349 |
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | JANTX2N910 |
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | MIL-S-19500/274 |