SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 5.3 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | CERAMIC |
TERMINAL TYPE AND QUANTITY | 4 FERRULE |
OVERALL LENGTH | 0.190 INCHES MAXIMUM |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL WIDTH | 0.160 INCHES MAXIMUM |
SPECIAL FEATURES | STUD MOUNTING; JUNCTION PATTERN ARRANGEMENT: NPN |
THE MANUFACTURERS DATA | |
MANUFACTURERS CODE | 08125 |
DESIGN CONTROL REFERENCE | 1A5TRANSISTOR |