SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND |
| 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND |
| 1300.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 7000.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT |
POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 INSULATED WIRE LEAD W/TERMINAL LUG AND |
| 2 ELECTRON TUBE BASE |
OVERALL LENGTH | 0.896 INCHES MINIMUM AND |
| 0.936 INCHES MAXIMUM |
OVERALL DIAMETER | 2.000 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | MTG FACILITIES INCLUDED |