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National Stock Number:
5961-01-051-8616
Federal Supply Class:
5961
National Item Identification Number:
010518616
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 2N6307 | 07688 | JOINT ELECTRON DEVICE ENGINEERING COUNCIL | | 2N6307 | 18722 | HARRIS CORP SEMICONDUCTOR SECTOR | | 345-214-045 | 07421 | L3HARRIS INTERSTATE ELECTRONICS CORPORATION | | 3013636-1 | 53711 | NAVAL SEA SYSTEMS COMMAND | | 2N6308 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 5961PL1247862 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH | | DTS424 | 16758 | GENERAL MOTORS CORP DELCO ELECTRONICS DIV | | DTS424 | 31338 | SEMITRONICS CORP | | DTS424 | 43611 | MICROSEMI CORP - MASSACHUSETTS | | 5E4850/79-0001 | 73030 | HAMILTON SUNDSTRAND CORPORATION | | FBNL143 | 80103 | VEECO INSTRUMENTS INC LAMBDA DIV | | JANTX2N6308 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | JANTX2N6308 | 81350 | JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | 712 ITT 04110 SAAF | N0002 | ALCATEL-LUCENT NORWAY AS | | SJ1945 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | STI-424 | 50891 | SEMICONDUCTOR TECHNOLOGY, INC. | | PTC424 | 54648 | MICROSEMI CORP POWER TECHNOLOGY COMPONENTS | | MIL-PRF-19500/498 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | MIL-S-19500/498 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | OVERALL HEIGHT | 0.450 INCHES MAXIMUM | | OVERALL LENGTH | 1.573 INCHES MAXIMUM | | OVERALL WIDTH | 1.050 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING FACILITY QUANTITY | 2 | | MOUNTING METHOD | UNTHREADED HOLE | | POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | | TERMINAL LENGTH | 0.312 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN | | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 350.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
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