SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM BASE TO EMITTER VOLTAGE, DC AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND |
| 50.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 2.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN AND |
| 1.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN AND |
| 2.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN |
POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | PLASTIC |
TERMINAL TYPE AND QUANTITY | 3 INSULATED WIRE LEAD |
OVERALL LENGTH | 0.580 INCHES MINIMUM AND |
| 0.620 INCHES MAXIMUM |
MOUNTING METHOD | BRACKET AND |
| UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
INTERNAL JUNCTION CONFIGURATION | NPN |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
MOUNTING FACILITY QUANTITY | 1 |
OVERALL HEIGHT | 0.170 INCHES MINIMUM AND |
| 0.196 INCHES MAXIMUM |
OVERALL WIDTH | 0.515 INCHES MINIMUM AND |
| 0.535 INCHES MAXIMUM |