| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | 400.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS |
| POWER RATING PER CHARACTERISTIC | 1.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS |
| INCLOSURE MATERIAL | GLASS |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.780 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS CASE AND |
| 200.0 DEG CELSIUS CASE |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 0.280 MILLIMETERS MAXIMUM |
| TERMINAL CIRCLE DIAMETER | 0.370 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | UHF/MICROWAVE NPN BJT |