SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND |
| 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.935 INCHES MAXIMUM |
MOUNTING METHOD | THREADED STUD |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TRANSFER RATIO | 4.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-60 |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.190 INCHES |
OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |