| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND |
| 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND |
| 1 CASE |
| OVERALL LENGTH | 0.450 INCHES NOMINAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DOUBLE BASE |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL DIAMETER | 0.875 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |