SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 26.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 97.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | CERAMIC AND |
| METAL |
TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND |
| 1 CASE |
OVERALL LENGTH | 0.800 INCHES NOMINAL |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL HEIGHT | 0.225 INCHES NOMINAL |
OVERALL WIDTH | 0.750 INCHES NOMINAL |
TEST DATA DOCUMENT | 19156-950031 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |