| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND |
| 33.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND |
| 65.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND |
| 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| INCLOSURE MATERIAL | CERAMIC ALL TRANSISTOR |
| MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 6 RIBBON ALL TRANSISTOR |
| OVERALL LENGTH | 0.980 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL HEIGHT | 0.300 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL WIDTH | 0.865 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| SPECIAL FEATURES | CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES. |
| TEST DATA DOCUMENT | 13499-352-1090 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |