SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.8 MAXIMUM BASE TO EMITTER VOLTAGE, DC AND |
| 0.6 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 0.70 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, BASE OPEN AND |
| 5.00 MILLIAMPERES MAXIMUM EMITTER CUTOFF CURRENT, DC, COLLECTOR OPEN |
POWER RATING PER CHARACTERISTIC | 115.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 1 CASE AND |
| 2 PIN |
OVERALL LENGTH | 1.573 INCHES MAXIMUM |
MOUNTING METHOD | UNTHREADED HOLE |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
MOUNTING FACILITY QUANTITY | 2 |
OVERALL HEIGHT | 0.345 INCHES MAXIMUM |
OVERALL WIDTH | 1.050 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TEST DATA DOCUMENT | 24429-10-19655 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
SPECIAL FEATURES | VBE AND W ARE MIN RATINGS; LEAD LENGTH IS 0.400 IN. MIN; JUNCTION PATTERN ARRANGEMENT: NPN |