COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE THYRISTOR |
CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES MAXIMUM REPETITIVE PEAK ON-STATE CURRENT AND 25.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 300.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE ALL SEMICONDUCTOR DEVICE THYRISTOR |
OVERALL HEIGHT | 0.787 INCHES NOMINAL |
OVERALL LENGTH | 3.620 INCHES NOMINAL |
OVERALL WIDTH | 1.417 INCHES NOMINAL |
MATERIAL | PLASTIC ENCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS AMBIENT AIR |
MOUNTING FACILITY QUANTITY | 2 |
MOUNTING METHOD | UNTHREADED HOLE |
POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE THYRISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 3 SCREW |
TEST DATA DOCUMENT | 10110-140195 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1300.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR |