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National Stock Number:
5961-01-135-4118
Federal Supply Class:
5961
National Item Identification Number:
011354118
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 4046179-0801 | 06845 | RAYTHEON COMPANY | | 4051280-0701 | 06845 | RAYTHEON COMPANY | | TID141N | 01295 | TEXAS INSTRUMENTS INCORPORATED | | FSA2501M | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | FSA2501M | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 16 SEMICONDUCTOR DEVICE DIODE | | CURRENT RATING PER CHARACTERISTIC | 350.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL TRANSISTOR | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-116-2 | | OVERALL HEIGHT | 0.200 INCHES MAXIMUM | | OVERALL LENGTH | 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM | | OVERALL WIDTH | 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM | | MATERIAL | CERAMIC INCLOSURE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | POWER RATING PER CHARACTERISTIC | 650.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.5 MAXIMUM FORWARD VOLTAGE, DC AND 60.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE | | TERMINAL TYPE AND QUANTITY | 14 PIN |
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