COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 0.50 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL SEMICONDUCTOR |
OVERALL HEIGHT | 0.280 INCHES MAXIMUM |
OVERALL LENGTH | 0.785 INCHES MAXIMUM |
OVERALL WIDTH | 0.300 INCHES MAXIMUM |
MATERIAL | CERAMIC INCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 CELSIUS CASE AND 175.0 CELSIUS CASE |
MOUNTING FACILITY QUANTITY | 14 |
MOUNTING METHOD | TERMINAL |
SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
POWER RATING PER CHARACTERISTIC | 1900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS ALL SEMICONDUCTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM WORKING PEAK OFF-STATE VOLTAGE ALL SEMICONDUCTOR |
TERMINAL LENGTH | 0.120 INCHES MAXIMUM |
TERMINAL TYPE AND QUANTITY | 14 UNINSULATED WIRE LEAD |