| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS |
| POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TRANSFER RATIO | 100.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| OVERALL HEIGHT | 0.690 INCHES MINIMUM |
| OVERALL WIDTH | 0.145 INCHES NOMINAL |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |