COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 70.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.240 INCHES MINIMUM AND |
| 0.260 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.335 INCHES MINIMUM AND |
| 0.370 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
COMPONENT FUNCTION RELATIONSHIP | MATCHED |