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National Stock Number:
5961-01-157-0362
Federal Supply Class:
5961
National Item Identification Number:
011570362
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 845705-1 | 49956 | RAYTHEON COMPANY | | 8561103-2 | 11447 | L3 TECHNOLOGIES, INC. | | CA3083F | 1MY79 | INTERSIL COMMUNICATIONS INC. | | CA3083F | 34371 | RENESAS ELECTRONICS AMERICA INC | | 8561103-2 | 49671 | LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 5 SEMICONDUCTOR DEVICE DIODE | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND | | 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND | | 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL SEMICONDUCTOR DEVICE DIODE | | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, INSTANTANEOUS AND | | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE | | POWER RATING PER CHARACTERISTIC | 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR | | INCLOSURE MATERIAL | CERAMIC | | MOUNTING METHOD | TERMINAL | | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT | | SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PNP |
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