| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 200.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND |
| 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 2.00 AMPERES MAXIMUM BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 87.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND |
| 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TRANSFER RATIO | 15.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |