SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND |
| 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS |
CURRENT RATING PER CHARACTERISTIC | 260.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND |
| 17.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL AND |
| CERAMIC |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-200AB |
MOUNTING METHOD | COMPRESSION |
TERMINAL TYPE AND QUANTITY | 2 CASE AND |
| 1 QUICK DISCONNECT, MALE AND |
| 1 SOLDER STUD |
OVERALL LENGTH | 12.45 MILLIMETERS MINIMUM AND |
| 15.24 MILLIMETERS MAXIMUM |
OVERALL DIAMETER | 36.07 MILLIMETERS MINIMUM AND |
| 43.18 MILLIMETERS MAXIMUM |