| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | PLASTIC |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TRANSFER RATIO | 80.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| TERMINAL LENGTH | 0.400 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| OVERALL DIAMETER | 0.330 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |