5980-01-179-4843 LIGHT EMITTING DIODE Index 8105-01-179-4845 BAG,PLASTIC

National Stock Number:
5961-01-179-4844

Federal Supply Class:
5961

National Item Identification Number:
011794844

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.


Manufacturer Information:
2678283B150RAYTHEON COMPANY
26782849956RAYTHEON COMPANY
SA10133B150RAYTHEON COMPANY
SA101349956RAYTHEON COMPANY
26782854X10RAYTHEON COMPANY
2N372680131ELECTRONIC INDUSTRIES ASSOCIATION
SGB155101295TEXAS INSTRUMENTS INCORPORATED
SA101354X10RAYTHEON COMPANY


Techincal Specification:
COMPONENT NAME AND QUANTITY2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDEDHERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 CELSIUS JUNCTION
MOUNTING METHODTERMINAL
OVERALL DIAMETER0.352 INCHES NOMINAL
OVERALL LENGTH0.250 INCHES NOMINAL
SPECIAL FEATURESALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
POWER RATING PER CHARACTERISTIC1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
PRECIOUS MATERIAL AND LOCATIONLEAD SURFACES GOLD
PRECIOUS MATERIALGOLD
SEMICONDUCTOR MATERIALSILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL LENGTH1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR


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