ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL TRANSISTOR |
COMPONENT FUNCTION RELATIONSHIP | MATCHED |
COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC 1ST TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
INTERNAL JUNCTION CONFIGURATION | PNP 1ST TRANSISTOR |
INTERNAL JUNCTION CONFIGURATION | NPN 2ND TRANSISTOR |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS AMBIENT AIR 1ST TRANSISTOR |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION 2ND TRANSISTOR |
MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
OVERALL HEIGHT | 0.328 INCHES MAXIMUM 2ND TRANSISTOR |
OVERALL HEIGHT | 0.340 INCHES MAXIMUM 1ST TRANSISTOR |
OVERALL LENGTH | 1.573 INCHES MAXIMUM 2ND TRANSISTOR |
OVERALL LENGTH | 1.252 INCHES MAXIMUM 1ST TRANSISTOR |
OVERALL WIDTH | 1.050 INCHES MAXIMUM 2ND TRANSISTOR |
OVERALL WIDTH | 0.700 INCHES MAXIMUM 1ST TRANSISTOR |
POWER RATING PER CHARACTERISTIC | 250.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 2ND TRANSISTOR |
POWER RATING PER CHARACTERISTIC | 35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE ALL TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR |