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National Stock Number:
5961-01-181-1676
Federal Supply Class:
5961
National Item Identification Number:
011811676
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 10133350 | A486G | NIMIKKEISTOKESKUS NCB FINLAND | | 2N3838J | 01295 | TEXAS INSTRUMENTS INCORPORATED | | MC2N3838JC | 04713 | FREESCALE SEMICONDUCTOR, INC. | | SD3265H | 04713 | FREESCALE SEMICONDUCTOR, INC. | | SD3265H | 5V1P1 | ON SEMICONDUCTOR CORPORATION | | H980004-001C | 82577 | RAYTHEON COMPANY |
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Techincal Specification:
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC AND 125.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-89 | | MATERIAL | GLASS ENCLOSURE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | OVERALL HEIGHT | 0.050 INCHES MAXIMUM | | OVERALL LENGTH | 0.260 INCHES MAXIMUM | | OVERALL WIDTH | 0.150 INCHES MAXIMUM | | POWER RATING PER CHARACTERISTIC | 1400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | SPECIAL FEATURES | INTERNAL JUNCTION ONFIGURATION FIRST TRANSISTOR NPN AND SECOND TRANSISTOR PNP | | TERMINAL LENGTH | 0.150 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 6 RIBBON | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR |
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