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National Stock Number:
5961-01-183-6502
Federal Supply Class:
5961
National Item Identification Number:
011836502
Description:
TRANSISTOR
Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
| 019-005273-001 | 26916 | NORTHROP GRUMMAN SYSTEMS CORPORATION | | 2N3576 | 30043 | SOLID STATE DEVICES, INC | | 2N4209 | 04713 | FREESCALE SEMICONDUCTOR, INC. | | 2N4209 | 07187 | HONEYWELL INTERNATIONAL INC. | | 2N4209 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 2N4209 | 07933 | FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ | | 352-0959-031 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | | 352-0959-031 | 13499 | ROCKWELL COLLINS, INC. | | 352-0959-030 | 13499 | ROCKWELL COLLINS, INC. | | 646289-901 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION | | 2N4209 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION | | 2N4209 | 3B150 | RAYTHEON COMPANY | | 2N4209 | 49956 | RAYTHEON COMPANY | | 352-0959-031 | 95105 | ROCKWELL COLLINS, INC. | | 8504333-309 | 07187 | HONEYWELL INTERNATIONAL INC. | | RS3896 | 07933 | FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ | | SPT 4209 | 14552 | MICROSEMI CORPORATION | | SPT4209 | 30043 | SOLID STATE DEVICES, INC | | G161375-1 | 30043 | SOLID STATE DEVICES, INC | | 646289-901 | 37695 | RAYTHEON COMPANY | | G161375-1 | 3B150 | RAYTHEON COMPANY | | G161375-1 | 49956 | RAYTHEON COMPANY | | RC352-0959-030 | 95105 | ROCKWELL COLLINS, INC. |
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Techincal Specification:
| CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | INTERNAL CONFIGURATION | JUNCTION CONTACT | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-52 | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | OVERALL DIAMETER | 0.230 INCHES MAXIMUM | | OVERALL LENGTH | 0.150 INCHES MAXIMUM | | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION | | SEMICONDUCTOR MATERIAL | SILICON | | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | | TRANSFER RATIO | 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
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