| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| INTERNAL JUNCTION CONFIGURATION | NPN ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| INCLOSURE MATERIAL | CERAMIC ALL TRANSISTOR |
| MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON ALL TRANSISTOR |
| OVERALL LENGTH | 0.975 INCHES NOMINAL ALL TRANSISTOR |
| OVERALL HEIGHT | 0.285 INCHES NOMINAL ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |