| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND |
| 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 0.25 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.300 INCHES NOMINAL |
| MOUNTING METHOD | PRESS FIT |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| TRANSFER RATIO | 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| OVERALL DIAMETER | 0.155 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | LEADS GOLD |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |