| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND |
| 450.0 MAXIMUM COLLECTOR-TO-EMITTER SUBSTAINING VOLTAGE, WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND |
| 400.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND |
| 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 2.50 AMPERES MAXIMUM BASE CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND |
| 1 CASE |
| OVERALL LENGTH | 1.550 INCHES MAXIMUM |
| MOUNTING METHOD | UNTHREADED HOLE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| TRANSFER RATIO | 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND |
| 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 0.300 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |