SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| -100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND |
| 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM DRAIN CURRENT AND |
| -16.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK |
POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.240 INCHES MINIMUM AND |
| 0.260 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | FIELD EFFECT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.205 INCHES MAXIMUM |
OVERALL DIAMETER | 0.335 INCHES MINIMUM AND |
| 0.370 INCHES MAXIMUM |
TEST DATA DOCUMENT | 24587-04ES053 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |